Cascade Type-I Quantum Well GaSb-Based Diode Lasers
نویسندگان
چکیده
منابع مشابه
Cascade Type-I Quantum Well GaSb-Based Diode Lasers
Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an...
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A simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of Resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. We found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency THz QCLs.In low frequenc...
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The possibility to achieve laser action at different THz frequencies employing the so-called vertical transition will be discussed. The intra-well or vertical optical transition presents a number of features that makes it an ideal candidate for a systematic study of resonant tunnelling and dephasing in quantum cascade lasers. Laser action at 3.5 THz with very low threshold employing a single qu...
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a simple semi-phenomenological model, which accurately predicts the dependence of thresholdcurrent for temperature of resonant-phonon three well quantum cascade laser based on verticaltransitions is offered. we found that, the longitude optical phonon scattering of thermally excitedelectrons is the most important limiting factor for thermal performance of high frequency thz qcls.in low frequenc...
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ژورنال
عنوان ژورنال: Photonics
سال: 2016
ISSN: 2304-6732
DOI: 10.3390/photonics3020027